Identification and control of SiC polytypes in PVT methodSHENGHUANG LIN; ZHIMING CHEN; BO LIU et al.Journal of materials science. Materials in electronics. 2010, Vol 21, Num 4, pp 326-330, issn 0957-4522, 5 p.Article

Evaluation of ZnO substrates for homoepitaxyWENISCH, H; KIRCHNER, V; HONG, S. K et al.Journal of crystal growth. 2001, Vol 227-28, pp 944-949, issn 0022-0248Conference Paper

Rapid enlargement of SiC single crystal using a cone-shaped platformBAHNG, W; KITOU, Y; NISHIZAWA, S et al.Journal of crystal growth. 2000, Vol 209, Num 4, pp 767-772, issn 0022-0248Article

Isotopically pure ZnSe crystals grown from the vaporLAUCK, R; SCHÖNHERR, E.Journal of crystal growth. 1999, Vol 197, Num 3, pp 513-516, issn 0022-0248Conference Paper

Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport MethodBING GAO; KAKIMOTO, Koichi.Crystal growth & design. 2014, Vol 14, Num 3, pp 1272-1278, issn 1528-7483, 7 p.Article

Physical properties of Bi₂Te₃ and Sb₂Te₃ films deposited by close space vapor transportVIGIL-GALAN, O; CRUZ-GANDARILLA, F; FANDINO, J et al.Semiconductor science and technology. 2009, Vol 24, Num 2, issn 0268-1242, 025025.1-025025.6Article

Size control of ZnO nanostructures formed in different temperature zones by varying Ar flow rate with tunable optical propertiesMANZOOR, Umair; DO KYUNG KIM.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 3, pp 500-505, issn 1386-9477, 6 p.Article

Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (1120) surfaceKATSUNO, Masakazu; OHTANI, Noboru; FUJIMOTO, Tatsuo et al.Journal of electronic materials. 2005, Vol 34, Num 1, pp 91-95, issn 0361-5235, 5 p.Article

The effect of inhomogeneous dopant distribution on the electrical transport properties and thermal stability of CdTe:Cl single crystalsPOPOVYCH, V. D; SIZOV, F. F; PARFENJUK, O. A et al.Semiconductor science and technology. 2010, Vol 25, Num 3, issn 0268-1242, 035001.1-035001.6Article

SR phase contrast imaging to address the evolution of defects during SiC growthARGUNOVA, Tatiana S; GUTKIN, Mikhail Yu; JUNG HO JE et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 4, pp 819-824, issn 1862-6300, 6 p.Article

Spectroscopic and Structural Characterization of Two Polymorphs of 1,1,4,4-Tetraphenyl-1,3-butadieneGIRLANDO, Alberto; IANELLI, Sandra; TAVAZZI, Silvia et al.Crystal growth & design. 2010, Vol 10, Num 6, pp 2752-2758, issn 1528-7483, 7 p.Article

Liquid phase silicon at the front of crystallization during SiC PVT growthDRACHEV, R. V; STRATY, G. D; CHEREDNICHENKO, D. I et al.Journal of crystal growth. 2001, Vol 233, Num 3, pp 541-547, issn 0022-0248Article

Optimizing the temperature profile during sublimation growth of SiC single crystals: Control of heating power, frequency, and coil positionMEYER, Christian; PHILIP, Peter.Crystal growth & design. 2005, Vol 5, Num 3, pp 1145-1156, issn 1528-7483, 12 p.Article

ZnTe Nanowires with Oxygen Intermediate Band Grown by Bismuth-Catalyzed Physical Vapor TransportSO RA MOON; JUNG HYUK KIM; KIM, Yong et al.Journal of physical chemistry. C. 2012, Vol 116, Num 18, pp 10368-10374, issn 1932-7447, 7 p.Article

Deep centers in bulk AIN and their relation to low-angle dislocation boundariesPOLYAKOV, A. Y; SMIRNOV, N. B; MAKAROV, Yu. N et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4939-4941, issn 0921-4526, 3 p.Conference Paper

Analysis of in situ off-axis seeding surface preparation conditions for SiC PVT growthDRACHEV, R. V; CHEREDNICHENKO, D. I; SUDARSHAN, T. S et al.Journal of crystal growth. 2004, Vol 265, Num 1-2, pp 179-183, issn 0022-0248, 5 p.Article

Reproducible defect etching of SiC single crystalsSICHE, D; KLIMM, D; HÖLZEL, T et al.Journal of crystal growth. 2004, Vol 270, Num 1-2, pp 1-6, issn 0022-0248, 6 p.Article

On the mechanisms of cubic boron nitride film growthHOFSÄSS, H; EYHUSEN, S; RONNING, C et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 1103-1110, issn 0925-9635, 8 p.Conference Paper

Raman characterisation of PIII multilayer carbon filmsTARRANT, R. N; MCKENZIE, D. R; BILEK, M. M. M et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 1422-1426, issn 0925-9635, 5 p.Conference Paper

Physical vapor transport of lead telluridePALOSZ, W.Journal of crystal growth. 2000, Vol 216, Num 1-4, pp 273-282, issn 0022-0248Article

Modeling of silicon carbide crystal growth by physical vapor transport methodMA, R.-H; CHEN, Q.-S; ZHANG, H et al.Journal of crystal growth. 2000, Vol 211, Num 1-4, pp 352-359, issn 0022-0248Conference Paper

Observation of polytype stability in different-impurities-doped 6H-SiC crystalsSHENGHUANG LIN; ZHIMING CHEN; YUAN MA et al.Diamond and related materials. 2011, Vol 20, Num 4, pp 516-519, issn 0925-9635, 4 p.Article

Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbideVETTER, W. M; DUDLEY, M.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2001, Vol 81, Num 12, pp 2885-2902, issn 1364-2804, 18 p.Article

Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVTSELDER, M; KADINSKI, L; MAKAROV, Yu et al.Journal of crystal growth. 2000, Vol 211, Num 1-4, pp 333-338, issn 0022-0248Conference Paper

Synthesis, photoluminescence and dielectric properties of O-deficient SnO₂ nanowiresLI, P. G; GUO, X; WANG, X. F et al.Journal of alloys and compounds. 2009, Vol 479, Num 1-2, pp 74-77, issn 0925-8388, 4 p.Article